Magnetic memory device and method for manufacturing the same

ABSTRACT

A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2019-0121627, filed onOct. 1, 2019, in the Korean Intellectual Property Office, the disclosureof which is hereby incorporated by reference in its entirety.

FIELD

Embodiments of the inventive concepts relate to a magnetic memory deviceand, more particularly, to a magnetic memory device using a movementphenomenon of a magnetic domain wall and a method for manufacturing thesame.

BACKGROUND

High-speed and low-voltage memory devices may be used to satisfy demandfor high-speed and low-power electronic devices including memorydevices. A magnetic memory device has been studied as a memory devicesatisfying this demand. Magnetic memory devices have become candidatesfor next-generation memory device because of their high-speed operationcharacteristics and/or non-volatile characteristics. In particular,magnetic memory devices using a movement phenomenon of a magnetic domainwall of a magnetic material have been studied and developed.

SUMMARY

Embodiments of the inventive concepts may provide a magnetic memorydevice capable of improving an integration density and a method formanufacturing the same.

Embodiments of the inventive concepts may also provide a magnetic memorydevice suitable for mass production and a method for manufacturing thesame.

In some embodiments, a magnetic memory device may include a conductiveline extending in a first direction, a magnetic line extending in asecond direction intersecting the first direction on the conductiveline, the magnetic line intersecting the conductive line, and a magneticpattern between the conductive line and the magnetic line. The magneticpattern may have first sidewalls opposite to each other in the firstdirection, and second sidewalls opposite to each other in the seconddirection. The second sidewalls of the magnetic pattern may be alignedwith opposing sidewalls of the conductive line, respectively.

In some embodiments, a magnetic memory device may include a firstconductive line extending in a first direction, a first magnetic lineextending in a second direction intersecting the first direction on thefirst conductive line, the first magnetic line intersecting the firstconductive line, a first magnetic pattern between the first conductiveline and the first magnetic line, a second conductive line extending inparallel to the first magnetic line along the second direction on thefirst magnetic line, a second magnetic line extending in the firstdirection on the second conductive line and intersecting the secondconductive line, and a second magnetic pattern between the secondconductive line and the second magnetic line. The second conductive linemay be vertically spaced apart from the first magnetic line, and thefirst conductive line and the second conductive line may benon-magnetic.

In some embodiments, a magnetic memory device may include conductivelines extending in a first direction and spaced apart from each other ina second direction intersecting the first direction, magnetic linesextending in the second direction on the conductive lines and spacedapart from each other in the first direction, the magnetic linesintersecting the conductive lines, magnetic patterns disposed atintersections of the conductive lines and the magnetic lines,respectively, and tunnel barrier lines disposed between the conductivelines and the magnetic lines, extending in the second direction andspaced apart from each other in the first direction. Each of the tunnelbarrier lines may be disposed between a corresponding one of themagnetic lines and corresponding ones of the magnetic patterns. Each ofthe magnetic patterns may have first sidewalls opposite to each other inthe first direction, and second sidewalls opposite to each other in thesecond direction. The second sidewalls of each of the magnetic patternsmay be aligned with sidewalls of a corresponding one of the conductivelines.

In some embodiments, a method for manufacturing a magnetic memory devicemay include forming a conductive line and a preliminary magnetic patternwhich are sequentially stacked on a substrate and extend in a firstdirection, forming a first interlayer insulating layer on the conductiveline and the preliminary magnetic pattern, forming a tunnel barrierlayer and a magnetic layer which are sequentially stacked on the firstinterlayer insulating layer, forming a mask pattern extending in asecond direction intersecting the first direction on the magnetic layer,and performing an etching process of etching the magnetic layer, thetunnel barrier layer, the first interlayer insulating layer and thepreliminary magnetic pattern by using the mask pattern as an etch mask.The conductive line may be used as an etch stop layer in the etchingprocess.

BRIEF DESCRIPTION OF THE DRAWINGS

The inventive concepts will become more apparent in view of the attacheddrawings and accompanying detailed description.

FIG. 1 is a perspective view schematically illustrating a magneticmemory device according to some embodiments of the inventive concepts.

FIGS. 2A, 2B, 2C and 2D are cross-sectional views taken along linesA-A′, B-B′, C-C′ and D-D′ of FIG. 1 , respectively.

FIGS. 2E and 2F are enlarged views of a portion ‘PP’ of FIG. 2A.

FIGS. 3, 5, 7 and 9 are perspective views illustrating a method formanufacturing a magnetic memory device according to some embodiments ofthe inventive concepts.

FIGS. 4A, 6A, 8A and 10A are cross-sectional views taken along linesA-A′ of FIGS. 3, 5, 7 and 9 , respectively.

FIGS. 4B, 6B, 8B and 10B are cross-sectional views taken along linesB-B′ of FIGS. 3, 5, 7 and 9 , respectively.

FIGS. 4C, 6C, 8C and 10C are cross-sectional views taken along linesC-C′ of FIGS. 3, 5, 7 and 9 , respectively.

FIGS. 4D, 6D, 8D and 10D are cross-sectional views taken along linesD-D′ of FIGS. 3, 5, 7 and 9 , respectively.

FIG. 11 is a perspective view schematically illustrating a magneticmemory device according to some embodiments of the inventive concepts.

FIGS. 12A, 12B, 12C and 12D are cross-sectional views taken along linesA-A′, B-B′, C-C′ and D-D′ of FIG. 11 , respectively.

FIGS. 13, 15, 17 and 19 are perspective views illustrating a method formanufacturing a magnetic memory device according to some embodiments ofthe inventive concepts.

FIGS. 14A, 16A, 18A and 20A are cross-sectional views taken along linesA-A′ of FIGS. 13, 15, 17 and 19 , respectively.

FIGS. 14B, 16B, 18B and 20B are cross-sectional views taken along linesB-B′ of FIGS. 13, 15, 17 and 19 , respectively.

FIGS. 14C, 16C, 18C and 20C are cross-sectional views taken along linesC-C′ of FIGS. 13, 15, 17 and 19 , respectively.

FIGS. 14D, 16D, 18D and 20D are cross-sectional views taken along linesD-D′ of FIGS. 13, 15, 17 and 19 , respectively.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the inventive concepts will be described indetail with reference to the accompanying drawings.

FIG. 1 is a perspective view schematically illustrating a magneticmemory device according to some embodiments of the inventive concepts.FIGS. 2A, 2B, 2C and 2D are cross-sectional views taken along linesA-A′, B-B′, C-C′ and D-D′ of FIG. 1 , respectively. FIGS. 2E and 2F areenlarged views of a portion ‘PP’ of FIG. 2A.

Referring to FIGS. 1 and 2A to 2D, a plurality of conductive lines 110may be disposed on a substrate 100. The conductive lines 110 may extendin a first direction D1 and may be spaced apart from each other in asecond direction D2 intersecting the first direction D1. An elementextending in a direction may refer to a longitudinal direction ofextension of the element. The terms first, second, etc., are used hereinto distinguish one element or direction from another rather than forpurposes of limitation, and a first element discussed herein could betermed a second element without departing from the scope of the presentinventive concepts. The first direction D1 and the second direction D2may be parallel to a top surface 100U of the substrate 100. Thesubstrate 100 may include a semiconductor substrate. For example, thesubstrate 100 may include a semiconductor substrate that includessilicon, silicon on an insulator (SOI), silicon-germanium (SiGe),germanium (Ge), or gallium-arsenic (GaAs). The conductive lines 110 maybe non-magnetic and may include a non-magnetic metal. The conductivelines 110 may include a metal (e.g., copper, tungsten, or aluminum)and/or a metal nitride (e.g., tantalum nitride, titanium nitride, ortungsten nitride).

A plurality of magnetic lines 150 may be disposed on the conductivelines 110 and may intersect the conductive lines 110. The magnetic lines150 may extend in the second direction D2 and may be spaced apart fromeach other in the first direction D1. The magnetic lines 150 may bevertically spaced apart from the conductive lines 110 in a thirddirection D3 perpendicular to the top surface 100U of the substrate 100.

Each of the magnetic lines 150 may include a plurality of magneticdomains D and a plurality of magnetic domain walls DW. In each of themagnetic lines 150, the magnetic domains D and the magnetic domain wallsDW may be alternately and repeatedly arranged in the second directionD2. Each of the magnetic domains D may be a region in a magnetic body,in which a magnetization direction is uniform. Each of the magneticdomain walls DW may be a region between the magnetic domains D in themagnetic body, in which a magnetization direction changes. Here, themagnetic body may be each of the magnetic lines 150. Each of themagnetic domain walls DW may define a boundary between the magneticdomains D having different magnetization directions. Sizes andmagnetization directions of the magnetic domains D may be appropriatelycontrolled by a shape and/or a size of the magnetic body and externalenergy. The magnetic domain walls DW may move by a magnetic field orcurrent applied to the magnetic body. The magnetic lines 150 may includeat least one of cobalt (Co), iron (Fe), or nickel (Ni).

A plurality of magnetic patterns 120 may be disposed between theconductive lines 110 and the magnetic lines 150 and may be located atintersection points or respective intersections of the conductive lines110 and the magnetic lines 150, respectively. The magnetic patterns 120may be two-dimensionally arranged in the first direction D1 and thesecond direction D2. Each of the magnetic patterns 120 may beelectrically connected to a corresponding one of the conductive lines110. The magnetic patterns 120 may include at least one of cobalt (Co),iron (Fe), or nickel (Ni).

A plurality of tunnel barrier lines 140 may be disposed between theconductive lines 110 and the magnetic lines 150 and may intersect theconductive lines 110. The tunnel barrier lines 140 may extend in thesecond direction D2 and may be spaced apart from each other in the firstdirection D1. Each of the tunnel barrier lines 140 may be disposedbetween a corresponding one of the magnetic lines 150 and correspondingones of the magnetic patterns 120. The corresponding magnetic patterns120 may be spaced apart from each other in the second direction D2 andmay be connected to the conductive lines 110, respectively. The tunnelbarrier lines 140 may include at least one of a magnesium oxide (MgO)layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO) layer, amagnesium-zinc oxide (MgZnO) layer, or a magnesium-boron oxide (MgBO)layer.

Each of the magnetic patterns 120 may have first sidewalls 120S1opposite to each other in the first direction D1, and second sidewalls120S2 opposite to each other in the second direction D2. The secondsidewalls 120S2 of each of the magnetic patterns 120 may be aligned(i.e., coplanar) with both (e.g., opposing) sidewalls 110S of acorresponding one of the conductive lines 110, respectively. The firstsidewalls 120S1 of each of the magnetic patterns 120 may be aligned withopposing sidewalls 140S of a corresponding one of the tunnel barrierlines 140, respectively, and may be aligned with opposing sidewalls 150Sof a corresponding one of the magnetic lines 150, respectively. Thesidewalls 140S of the tunnel barrier lines 140 may be aligned with thesidewalls 150S of the magnetic lines 150.

A first interlayer insulating layer 130 may be disposed on the substrate100 to cover the conductive lines 110 and the magnetic patterns 120. Thefirst interlayer insulating layer 130 may include a first portion 130P1disposed between the conductive lines 110, and a second portion 130P2protruding from the first portion 130P1 in the third direction D3 anddisposed between the magnetic patterns 120 in the second direction D2.The first portion 130P1 of the first interlayer insulating layer 130 maycover the sidewalls 110S of the conductive lines 110. A top surface ofthe first portion 130P1 of the first interlayer insulating layer 130 maybe substantially coplanar with top surfaces of the conductive lines 110.For example, the top surface of the first portion 130P1 of the firstinterlayer insulating layer 130 may be located at substantially the sameheight (relative to the surface 100U of the substrate 100) as the topsurfaces of the conductive lines 110. The second portion 130P2 of thefirst interlayer insulating layer 130 may be disposed between themagnetic patterns 120 arranged in the second direction D2. The secondportion 130P2 of the first interlayer insulating layer 130 may cover thesecond sidewalls 120S2 of the magnetic patterns 120 and may expose thefirst sidewalls 120S1 of the magnetic patterns 120.

Each of the tunnel barrier lines 140 may be disposed between acorresponding one of the magnetic lines 150 and corresponding ones ofthe magnetic patterns 120 arranged in the second direction D2 and mayextend between each of the magnetic lines 150 and the second portion130P2 of the first interlayer insulating layer 130. The first sidewalls120S1 of each of the magnetic patterns 120 and the top surfaces of theconductive lines 110 may not be covered by the first interlayerinsulating layer 130 but may be exposed. For example, the firstinterlayer insulating layer 130 may include at least one of siliconoxide, silicon nitride, or silicon oxynitride.

A second interlayer insulating layer 160 may be disposed on the firstinterlayer insulating layer 130 and may cover the first sidewalls 120S1of each of the magnetic patterns 120 and the top surfaces of theconductive lines 110. The second interlayer insulating layer 160 mayextend between the tunnel barrier lines 140 and between the magneticlines 150. The second interlayer insulating layer 160 may cover thesidewalls 140S of the tunnel barrier lines 140 and the sidewalls 150S ofthe magnetic lines 150. For example, the second interlayer insulatinglayer 160 may include at least one of silicon oxide, silicon nitride, orsilicon oxynitride.

Referring to FIGS. 2E and 2F, each of the magnetic patterns 120 may be apinned layer having a magnetization direction 120MD fixed in onedirection, and each of the magnetic lines 150 may be a free layer havinga changeable magnetization direction 150MD. Each of the magnetic domainsD may have the magnetization direction 150MD changeable to be parallel(i.e., in the same magnetization direction) or anti-parallel (i.e., inthe opposite magnetization direction) to the magnetization direction120MD of each of the magnetic patterns 120.

Referring to FIG. 2E, in some embodiments, the magnetization direction120MD of each of the magnetic patterns 120 and the magnetizationdirection 150MD of each of the magnetic domains D may be perpendicularto an interface between each of the magnetic patterns 120 and the tunnelbarrier line 140 corresponding thereto. In this case, the magneticpatterns 120 and the magnetic lines 150 may include at least one of aperpendicular magnetic material (e.g., CoFeTb, CoFeGd, or CoFeDy), aperpendicular magnetic material having a L1 ₀ structure, a CoPt alloyhaving a hexagonal close packed (HCP) lattice structure, or aperpendicular magnetic structure. The perpendicular magnetic materialhaving the L1 ₀ structure may include at least one of FePt having the L1₀ structure, FePd having the L1 ₀ structure, CoPd having the L1 ₀structure, or CoPt having the L1 ₀ structure. The perpendicular magneticstructure may include magnetic layers and non-magnetic layers, which arealternately and repeatedly stacked. For example, the perpendicularmagnetic structure may include at least one of (Co/Pt)n, (CoFe/Pt)n,(CoFe/Pd)n, (Co/Pd)n, (Co/Ni)n, (CoNi/Pt)n, (CoCr/Pt)n, or (CoCr/Pd)n,where ‘n’ denotes the number of bilayers.

Referring to FIG. 2F, in certain embodiments, the magnetizationdirection 120MD of each of the magnetic patterns 120 and themagnetization direction 150MD of each of the magnetic domains D may beparallel to the interface between each of the magnetic patterns 120 andthe tunnel barrier line 140 corresponding thereto. In this case, themagnetic patterns 120 and the magnetic lines 150 may include aferromagnetic material, and the magnetic patterns 120 may furtherinclude an anti-ferromagnetic material for fixing a magnetizationdirection of the ferromagnetic material.

Hereinafter, read and write operations of the magnetic memory deviceaccording to some embodiments of the inventive concepts will bedescribed with reference to FIGS. 2A and 2E. The case in which themagnetization directions 120MD and 150MD are perpendicular to theinterface between each of the magnetic patterns 120 and the tunnelbarrier line 140 corresponding thereto (as shown in FIG. 2E) will bedescribed as an example for ease and convenience in explanation.However, embodiments of the inventive concepts are not limited thereto.The following read and write operations of the magnetic memory devicemay be applied to the case in which the magnetization directions 120MDand 150MD are parallel to the interface between each of the magneticpatterns 120 and the tunnel barrier line 140 corresponding thereto (asshown in FIG. 2F).

Referring to FIGS. 2A and 2E, a current I for moving the magnetic domainwalls DW may flow through one of the magnetic lines 150. A movementdirection of the magnetic domain walls DW may be determined by adirection of the current I. The magnetic domain walls DW may be moved ina movement direction of electrons E, and thus the magnetic domain wallsDW may be moved in a direction opposite to the direction of the currentI. For example, the current I may flow in the second direction D2, andthe magnetic domain walls DW may be moved in a direction opposite to thesecond direction D2. A corresponding one of the magnetic domains D maybe aligned on a corresponding one of the magnetic patterns 120 by themovement of the magnetic domain walls DW. The corresponding magneticdomain D and the corresponding magnetic pattern 120 may constitute amagnetic tunnel junction MTJ.

In a read operation, a read current I_(read) may flow through themagnetic tunnel junction MTJ. For example, the read current I_(read) mayflow from the corresponding magnetic pattern 120 to the correspondingmagnetic domain D along the third direction D3. A resistance state ofthe magnetic tunnel junction MTJ may be detected by the read currentI_(read). Whether the magnetic tunnel junction MTJ is in ahigh-resistance state or a low-resistance state may be detected by theread current I_(read). For an example, when the magnetization direction150MD of the corresponding magnetic domain D is parallel to themagnetization direction 120MD of the corresponding magnetic pattern 120,the magnetic tunnel junction MTJ may be in the low-resistance state. Foranother example, when the magnetization direction 150MD of thecorresponding magnetic domain D is anti-parallel to the magnetizationdirection 120MD of the corresponding magnetic pattern 120, the magnetictunnel junction MTJ may be in the high-resistance state. Data (0 or 1)stored in the corresponding magnetic domain D may be detected from theresistance state of the magnetic tunnel junction MTJ.

In a write operation, a write current I_(sw) or I_(swr) may flow throughthe magnetic tunnel junction MTJ. For an example, the write currentI_(sw) may flow from the corresponding magnetic pattern 120 to thecorresponding magnetic domain D along the third direction D3. Foranother example, the write current I_(swr) may flow from thecorresponding magnetic domain D to the corresponding magnetic pattern120 along a direction opposite to the third direction D3. A magnitude ofthe write current I_(sw) or I_(swr) may be greater than a magnitude ofthe read current I_(read). The magnetization direction 150MD of thecorresponding magnetic domain D may be reversed by spin-transfer torquegenerated by the write current I_(sw) or I_(swr). The magnetizationdirection 150MD of the corresponding magnetic domain D may be switchedin parallel or anti-parallel to the magnetization direction 120MD of thecorresponding magnetic pattern 120 by the spin-transfer torque generatedby the write current I_(sw) or I_(swr).

Referring again to FIGS. 1 and 2A to 2D, some of the magnetic patterns120 may function as read elements for performing the read operation, andothers of the magnetic patterns 120 may function as write elements forperforming the write operation. For example, each of the magnetic lines150 may be connected in common to the magnetic patterns 120 arranged inthe second direction D2. In this case, some of the magnetic patterns 120arranged in the second direction D2 may function as the read elements,and others of the magnetic patterns 120 arranged in the second directionD2 may function as the write elements.

FIGS. 3, 5, 7 and 9 are perspective views illustrating a method formanufacturing a magnetic memory device according to some embodiments ofthe inventive concepts. FIGS. 4A, 6A, 8A and 10A are cross-sectionalviews taken along lines A-A′ of FIGS. 3, 5, 7 and 9 , respectively, andFIGS. 4B, 6B, 8B and 10B are cross-sectional views taken along linesB-B′ of FIGS. 3, 5, 7 and 9 , respectively. FIGS. 4C, 6C, 8C and 10C arecross-sectional views taken along lines C-C′ of FIGS. 3, 5, 7 and 9 ,respectively, and FIGS. 4D, 6D, 8D and 10D are cross-sectional viewstaken along lines D-D′ of FIGS. 3, 5, 7 and 9 , respectively.Hereinafter, the descriptions to the same features as mentioned withreference to FIGS. 1 and 2A to 2F will be omitted for ease andconvenience in explanation.

Referring to FIGS. 3 and 4A to 4D, conductive lines 110 and preliminarymagnetic patterns 120P may be formed on a substrate 100. The conductivelines 110 may extend in the first direction D1 and may be spaced apartfrom each other in the second direction D2. The preliminary magneticpatterns 120P may be formed on the conductive lines 110, respectively.The preliminary magnetic patterns 120P may extend in the first directionD1 and may be spaced apart from each other in the second direction D2.The formation of the conductive lines 110 and the preliminary magneticpatterns 120P may include sequentially forming a conductive layer and afirst magnetic layer on the substrate 100, forming first mask patternsM1 on the first magnetic layer, and sequentially etching the firstmagnetic layer and the conductive layer by using the first mask patternsM1 as etch masks. The conductive layer and the first magnetic layer maybe formed using a chemical vapor deposition (CVD) method or a physicalvapor deposition (PVD) method (e.g., a sputtering deposition method).The first mask patterns M1 may have linear or line shapes extending inthe first direction D1 and may be spaced apart from each other in thesecond direction D2. The first mask patterns M1 may include a materialhaving an etch selectivity with respect to the first magnetic layer andthe conductive layer. For example, the first mask patterns M1 mayinclude silicon oxide, silicon nitride, and/or silicon oxynitride.

The first magnetic layer and the conductive layer may be sequentiallyetched by a first etching process using the first mask patterns M1 asetch masks, and thus the preliminary magnetic patterns 120P and theconductive lines 110 may be formed. Since the preliminary magneticpatterns 120P are formed using the same mask patterns (i.e., the firstmask patterns M1) as the conductive lines 110, sidewalls 120PS of thepreliminary magnetic patterns 120P may be aligned with sidewalls 110S ofthe conductive lines 110.

Referring to FIGS. 5 and 6A to 6D, a first interlayer insulating layer130 may be formed on the substrate 100 to cover the preliminary magneticpatterns 120P and the conductive lines 110. For example, the formationof the first interlayer insulating layer 130 may include forming a firstinsulating layer covering the first mask patterns M1, the preliminarymagnetic patterns 120P and the conductive lines 110 on the substrate100, and planarizing the first insulating layer until top surfaces ofthe preliminary magnetic patterns 120P are exposed. The first maskpatterns M1 may be removed during the planarization of the firstinsulating layer.

Referring to FIGS. 7 and 8A to 8D, a tunnel barrier layer 140L and asecond magnetic layer 150L may be sequentially formed on the firstinterlayer insulating layer 130. The tunnel barrier layer 140L may coverthe exposed top surfaces of the preliminary magnetic patterns 120P and atop surface of the first interlayer insulating layer 130. The tunnelbarrier layer 140L may be disposed between the second magnetic layer150L and the preliminary magnetic patterns 120P and between the secondmagnetic layer 150L and the first interlayer insulating layer 130. Thetunnel barrier layer 140L and the second magnetic layer 150L may beformed using a CVD method or a PVD method (e.g., a sputtering depositionmethod). The second magnetic layer 150L may include a plurality ofmagnetic domains and a plurality of magnetic domain walls.

Second mask patterns M2 may be formed on the second magnetic layer 150L.The second mask patterns M2 may have linear or line shapes extending inthe second direction D2 and may be spaced apart from each other in thefirst direction D1. The second mask patterns M2 may include a materialhaving an etch selectivity with respect to the tunnel barrier layer 140Land the second magnetic layer 150L. For example, the second maskpatterns M2 may include silicon oxide, silicon nitride, and/or siliconoxynitride.

Referring to FIGS. 9 and 10A to 10D, the second magnetic layer 150L, thetunnel barrier layer 140L, the preliminary magnetic patterns 120P andthe first interlayer insulating layer 130 may be etched by a secondetching process using the second mask patterns M2 as etch masks. Thesecond magnetic layer 150L and the tunnel barrier layer 140L may besequentially etched by the second etching process, and thus magneticlines 150 and tunnel barrier lines 140 may be formed. The magnetic lines150 may extend in the second direction D2 to intersect the preliminarymagnetic patterns 120P and may be spaced apart from each other in thefirst direction D1. The tunnel barrier lines 140 may extend in thesecond direction D2 between the magnetic lines 150 and the preliminarymagnetic patterns 120P to intersect the preliminary magnetic patterns120P and may be spaced apart from each other in the first direction D1.Since the tunnel barrier lines 140 are formed using the same maskpatterns (i.e., the second mask patterns M2) as the magnetic lines 150,sidewalls 140S of the tunnel barrier lines 140 may be aligned withsidewalls 150S of the magnetic lines 150.

Portions of the preliminary magnetic patterns 120P, which are disposedat both (e.g., opposing) sides of each of the magnetic lines 150, may beetched by the second etching process. The second etching process may beperformed until the top surfaces of the conductive lines 110 at opposingsides of each of the magnetic lines 150 are exposed. The conductivelines 110 may function as an etch stop layer in the second etchingprocess. Since the preliminary magnetic patterns 120P are patterned bythe second etching process, magnetic patterns 120 may be formed undereach of the magnetic lines 150. The magnetic patterns 120 may be spacedapart from each other in the second direction D2 under each of themagnetic lines 150. Spatially relative terms, such as “beneath,”“below,” “lower,” “under,” “above,” “upper,” and the like, may be usedherein for ease of description to describe one element's relationship toanother element(s) as illustrated in the figures, but will be understoodto encompass different orientations in addition to the orientationdepicted in the figures. Each of the tunnel barrier lines 140 may bedisposed between a corresponding one of the magnetic lines 150 andcorresponding ones of the magnetic patterns 120. The magnetic patterns120 may be locally formed at intersection points or respectiveintersections of each of the magnetic lines 150 and the conductive lines110.

Each of the magnetic patterns 120 may have first sidewalls 120S1opposite to each other in the first direction D1, and second sidewalls120S2 opposite to each other in the second direction D2. Since thepreliminary magnetic patterns 120P are formed using the same maskpatterns (i.e., the first mask patterns M1) as the conductive lines 110,the second sidewalls 120S2 of each of the magnetic patterns 120 may bealigned with opposing sidewalls 110S of a corresponding one of theconductive lines 110, respectively. In addition, since the magneticpatterns 120 are formed using the same mask patterns (i.e., the secondmask patterns M2) as the magnetic lines 150 and the tunnel barrier lines140, the first sidewalls 120S1 of each of the magnetic patterns 120 maybe aligned with opposing sidewalls 140S of a corresponding one of thetunnel barrier lines 140, respectively, and may be aligned with opposingsidewalls 150S of a corresponding one of the magnetic lines 150,respectively.

Portions of the first interlayer insulating layer 130, which aredisposed at opposing sides of each of the magnetic lines 150, may beetched by the second etching process. Since the first interlayerinsulating layer 130 is patterned by the second etching process, thefirst interlayer insulating layer 130 may include a first portion 130P1disposed between the conductive lines 110, and a second portion 130P2disposed between the magnetic patterns 120. The first portion 130P1 ofthe first interlayer insulating layer 130 may cover the sidewalls 110Sof the conductive lines 110 and may expose the top surfaces of theconductive lines 110. The second portion 130P2 of the first interlayerinsulating layer 130 may cover the second sidewalls 120S2 of themagnetic patterns 120 and may expose the first sidewalls 120S1 of themagnetic patterns 120.

Referring again to FIGS. 1 and 2A to 2D, a second interlayer insulatinglayer 160 may be formed on the first interlayer insulating layer 130 andmay cover the first sidewalls 120S1 of each of the magnetic patterns 120and the top surfaces of the conductive lines 110. The second interlayerinsulating layer 160 may be formed to cover the sidewalls 140S of thetunnel barrier lines 140 and the sidewalls 150S of the magnetic lines150. For example, the formation of the second interlayer insulatinglayer 160 may include forming a second insulating layer covering theconductive lines 110, the magnetic patterns 120, the tunnel barrierlines 140, the magnetic lines 150 and the second mask patterns M2 on thefirst interlayer insulating layer 130, and planarizing the secondinsulating layer until top surfaces of the magnetic lines 150 areexposed. The second mask patterns M2 may be removed during theplanarization of the second insulating layer.

According to embodiments of the inventive concepts, the preliminarymagnetic patterns 120P may be formed using the first mask patterns M1 asetch masks, and the preliminary magnetic patterns 120P may be patternedusing the second mask patterns M2 as etch masks, thereby forming themagnetic patterns 120. Thus, the magnetic patterns 120 may beself-aligned with the intersection points or respective intersections ofthe magnetic lines 150 and the conductive lines 110.

In addition, the preliminary magnetic patterns 120P may be formed usingthe same mask patterns (i.e., the first mask patterns M1) as theconductive lines 110, and the magnetic patterns 120 may be formed usingthe same mask patterns (i.e., the second mask patterns M2) as themagnetic lines 150 and the tunnel barrier lines 140. In other words, anadditional mask pattern for forming the magnetic patterns 120 may not berequired.

As a result, processes for manufacturing a magnetic memory device may besimplified, and thus the high integration density and mass production ofthe magnetic memory device may be more easily realized.

FIG. 11 is a perspective view schematically illustrating a magneticmemory device according to some embodiments of the inventive concepts.FIGS. 12A, 12B, 12C and 12D are cross-sectional views taken along linesA-A′, B-B′, C-C′ and D-D′ of FIG. 11 , respectively. Hereinafter,differences between the present embodiments and the embodiments of FIGS.1 and 2A to 2F will be mainly described for ease and convenience inexplanation.

Referring to FIGS. 11 and 12A to 12D, a plurality of first conductivelines 110 may be disposed on a substrate 100. A plurality of firstmagnetic lines 150 may be disposed on the first conductive lines 110 andmay intersect the first conductive lines 110. The first magnetic lines150 may be vertically spaced apart from the first conductive lines 110in the third direction D3. A plurality of first magnetic patterns 120may be disposed between the first conductive lines 110 and the firstmagnetic lines 150 and may be located at intersection points orrespective intersections of the first conductive lines 110 and the firstmagnetic lines 150, respectively. A plurality of first tunnel barrierlines 140 may be disposed between the first conductive lines 110 and thefirst magnetic lines 150 and may intersect the first conductive lines110. Each of the first tunnel barrier lines 140 may be disposed betweena corresponding one of the first magnetic lines 150 and correspondingones of the first magnetic patterns 120. The corresponding firstmagnetic patterns 120 may be spaced apart from each other in the seconddirection D2 and may be connected to the first conductive lines 110,respectively.

Each of the first magnetic patterns 120 may have first sidewalls 120S1opposite to each other in the first direction D1, and second sidewalls120S2 opposite to each other in the second direction D2. The secondsidewalls 120S2 of each of the first magnetic patterns 120 may bealigned with opposing sidewalls 110S of a corresponding one of the firstconductive lines 110, respectively. The first sidewalls 120S1 of each ofthe first magnetic patterns 120 may be aligned with opposing sidewalls140S of a corresponding one of the first tunnel barrier lines 140,respectively, and may be aligned with opposing sidewalls 150S of acorresponding one of the first magnetic lines 150, respectively.

The first conductive lines 110, the first magnetic patterns 120, thefirst tunnel barrier lines 140 and the first magnetic lines 150 may besubstantially the same as the conductive lines 110, the magneticpatterns 120, the tunnel barrier lines 140 and the magnetic lines 150,described with reference to FIGS. 1 and 2A to 2F.

A first interlayer insulating layer 130 may be disposed on the substrate100 to cover the first conductive lines 110 and the first magneticpatterns 120. The first interlayer insulating layer 130 may include afirst portion 130P1 disposed between the first conductive lines 110, anda second portion 130P2 disposed between the first magnetic patterns 120.The second portion 130P2 of the first interlayer insulating layer 130may be disposed between the first magnetic patterns 120 arranged in thesecond direction D2. The first portion 130P1 of the first interlayerinsulating layer 130 may cover the sidewalls 110S of the firstconductive lines 110 and may expose top surfaces of the first conductivelines 110. The second portion 130P2 of the first interlayer insulatinglayer 130 may cover the second sidewalls 120S2 of the first magneticpatterns 120 and may expose the first sidewalls 120S1 of the firstmagnetic patterns 120.

A plurality of separation insulating lines 200 may be disposed on thefirst magnetic lines 150, respectively. The separation insulating lines200 may extend in the second direction D2 and may be spaced apart fromeach other in the first direction D1. The first magnetic lines 150 maybe disposed between the first tunnel barrier lines 140 and theseparation insulating lines 200. The sidewalls 150S of the firstmagnetic lines 150 may be aligned with sidewalls 200S of the separationinsulating lines 200, respectively. The separation insulating lines 200may include at least one of silicon oxide, silicon nitride, or siliconoxynitride.

A plurality of second conductive lines 210 may be disposed on theseparation insulating lines 200, respectively. The second conductivelines 210 may extend in the second direction D2 and may be spaced apartfrom each other in the first direction D1. The separation insulatinglines 200 may be disposed between the first magnetic lines 150 and thesecond conductive lines 210. The second conductive lines 210 may extendin parallel to the first magnetic lines 150. The sidewalls 200S of theseparation insulating lines 200 may be aligned with sidewalls 210S ofthe second conductive lines 210, respectively. The second conductivelines 210 may be electrically insulated from the first magnetic lines150 by the separation insulating lines 200. The second conductive lines210 may be non-magnetic and may include a non-magnetic metal. The secondconductive lines 210 may include a metal (e.g., copper, tungsten, oraluminum) and/or a metal nitride (e.g., tantalum nitride, titaniumnitride, or tungsten nitride). In some embodiments, the secondconductive lines 210 may include the same material as the firstconductive lines 110.

A plurality of second magnetic lines 250 may be disposed on the secondconductive lines 210 and may intersect the second conductive lines 210.The second magnetic lines 250 may extend in the first direction D1 andmay be spaced apart from each other in the second direction D2. Thesecond magnetic lines 250 may be vertically spaced apart from the secondconductive lines 210 in the third direction D3.

Each of the second magnetic lines 250 may include a plurality ofmagnetic domains D and a plurality of magnetic domain walls DW. In eachof the second magnetic lines 250, the magnetic domains D and themagnetic domain walls DW may be alternately and repeatedly arranged inthe first direction D1. The second magnetic lines 250 may include atleast one of cobalt (Co), iron (Fe), or nickel (Ni). In someembodiments, the second magnetic lines 250 may include the same materialas the first magnetic lines 150.

A plurality of second magnetic patterns 220 may be disposed between thesecond conductive lines 210 and the second magnetic lines 250 and may belocated at intersection points or respective intersections of the secondconductive lines 210 and the second magnetic lines 250, respectively.The second magnetic patterns 220 may be two-dimensionally arranged inthe first direction D1 and the second direction D2. Each of the secondmagnetic patterns 220 may be electrically connected to a correspondingone of the second conductive lines 210. The second magnetic patterns 220may include at least one of cobalt (Co), iron (Fe), or nickel (Ni). Insome embodiments, the second magnetic patterns 220 may include the samematerial as the first magnetic patterns 120.

A plurality of second tunnel barrier lines 240 may be disposed betweenthe second conductive lines 210 and the second magnetic lines 250, andmay intersect the second conductive lines 210. The second tunnel barrierlines 240 may extend in the first direction D1 and may be spaced apartfrom each other in the second direction D2. Each of the second tunnelbarrier lines 240 may be disposed between a corresponding one of thesecond magnetic lines 250 and corresponding ones of the second magneticpatterns 220. The corresponding second magnetic patterns 220 may bespaced apart from each other in the first direction D1 and may beconnected to the second conductive lines 210, respectively. The secondtunnel barrier lines 240 may include at least one of a magnesium oxide(MgO) layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO)layer, a magnesium-zinc oxide (MgZnO) layer, or a magnesium-boron oxide(MgBO) layer. In some embodiments, the second tunnel barrier lines 240may include the same material as the first tunnel barrier lines 140.

Each of the second magnetic patterns 220 may have third sidewalls 220S3opposite to each other in the first direction D1, and fourth sidewalls220S4 opposite to each other in the second direction D2. The thirdsidewalls 220S3 of each of the second magnetic patterns 220 may bealigned with opposing sidewalls 210S of a corresponding one of thesecond conductive lines 210, respectively. The fourth sidewalls 220S4 ofeach of the second magnetic patterns 220 may be aligned with opposingsidewalls 240S of a corresponding one of the second tunnel barrier lines240, respectively, and may be aligned with opposing sidewalls 250S of acorresponding one of the second magnetic lines 250, respectively. Thesidewalls 240S of the second tunnel barrier lines 240 may be alignedwith the sidewalls 250S of the second magnetic lines 250.

A second interlayer insulating layer 160 may be disposed on the firstinterlayer insulating layer 130 and may cover the first sidewalls 120S1of the first magnetic patterns 120 and the top surfaces of the firstconductive lines 110. The second interlayer insulating layer 160 mayextend between the first tunnel barrier lines 140, between the firstmagnetic lines 150, between the separation insulating lines 200, andbetween the second conductive lines 210. The second interlayerinsulating layer 160 may cover the sidewalls 140S of the first tunnelbarrier lines 140, the sidewalls 150S of the first magnetic lines 150,the sidewalls 200S of the separation insulating lines 200, and thesidewalls 210S of the second conductive lines 210.

The second interlayer insulating layer 160 may include a third portion160P3 disposed between the second conductive lines 210, and a fourthportion 160P4 protruding from the third portion 160P3 in the thirddirection D3 and disposed between the second magnetic patterns 220. Thethird portion 160P3 of the second interlayer insulating layer 160 mayextend between the separation insulating lines 200, between the firstmagnetic lines 150 and between the first tunnel barrier lines 140 andmay cover the first sidewalls 120S1 of the first magnetic patterns 120and the top surfaces of the first conductive lines 110. The thirdportion 160P3 of the second interlayer insulating layer 160 may exposetop surfaces of the second conductive lines 210. A top surface of thethird portion 160P3 of the second interlayer insulating layer 160 may besubstantially coplanar with the top surfaces of the second conductivelines 210. For example, the top surface of the third portion 160P3 ofthe second interlayer insulating layer 160 may be located atsubstantially the same height (relative to the substrate 100) as the topsurfaces of the second conductive lines 210.

The fourth portion 160P4 of the second interlayer insulating layer 160may be disposed between the second magnetic patterns 220 arranged in thefirst direction D1. The fourth portion 160P4 of the second interlayerinsulating layer 160 may cover the third sidewalls 220S3 of the secondmagnetic patterns 220 and may expose the fourth sidewalls 220S4 of thesecond magnetic patterns 220. For example, the second interlayerinsulating layer 160 may include at least one of silicon oxide, siliconnitride, or silicon oxynitride.

A third interlayer insulating layer 170 may be disposed on the secondinterlayer insulating layer 160 and may cover the fourth sidewalls 220S4of the second magnetic patterns 220 and the top surfaces of the secondconductive lines 210. The third interlayer insulating layer 170 mayextend between the second tunnel barrier lines 240 and between thesecond magnetic lines 250. The third interlayer insulating layer 170 maycover the sidewalls 240S of the second tunnel barrier lines 240 and thesidewalls 250S of the second magnetic lines 250. For example, the thirdinterlayer insulating layer 170 may include at least one of siliconoxide, silicon nitride, or silicon oxynitride.

The first conductive lines 110, the first magnetic patterns 120, thefirst tunnel barrier lines 140 and the first magnetic lines 150 mayconstitute a first cell stack, and the second conductive lines 210, thesecond magnetic patterns 220, the second tunnel barrier lines 240 andthe second magnetic lines 250 may constitute a second cell stack. Amagnetic memory device according to the present embodiments may includethe first cell stack and the second cell stack which are sequentiallystacked on the substrate 100. However, embodiments of the inventiveconcepts are not limited thereto. The magnetic memory device may furtherinclude one or more additional cell stacks stacked on the second cellstack. Except that the extending directions of the second conductivelines 210, the second tunnel barrier lines 240 and the second magneticlines 250 are different from the extending directions of the firstconductive lines 110, the first tunnel barrier lines 140 and the firstmagnetic lines 150, other features and components of the second cellstack may be substantially the same as corresponding features andcomponents of the first cell stack. The second cell stack may operate(e.g., read/write operations) by substantially the same method as thefirst cell stack.

FIGS. 13, 15, 17 and 19 are perspective views illustrating a method formanufacturing a magnetic memory device according to some embodiments ofthe inventive concepts. FIGS. 14A, 16A, 18A and 20A are cross-sectionalviews taken along lines A-A′ of FIGS. 13, 15, 17 and 19 , respectively,and FIGS. 14B, 16B, 18B and 20B are cross-sectional views taken alonglines B-B′ of FIGS. 13, 15, 17 and 19 , respectively. FIGS. 14C, 16C,18C and 20C are cross-sectional views taken along lines C-C′ of FIGS.13, 15, 17 and 19 , respectively, and FIGS. 14D, 16D, 18D and 20D arecross-sectional views taken along lines D-D′ of FIGS. 13, 15, 17 and 19, respectively. Hereinafter, the descriptions to the same features asmentioned with reference to FIGS. 3 to 10D will be omitted for ease andconvenience in explanation.

Referring to FIGS. 13 and 14A to 14D, first conductive lines 110 andfirst preliminary magnetic patterns 120P may be formed on a substrate100. The first conductive lines 110 and the first preliminary magneticpatterns 120P may be formed by substantially the same method as theconductive lines 110 and the preliminary magnetic patterns 120P,described with reference to FIGS. 3 and 4A to 4D. For example, theformation of the first conductive lines 110 and the first preliminarymagnetic patterns 120P may include sequentially forming a firstconductive layer and a first magnetic layer on the substrate 100,forming first mask patterns on the first magnetic layer, and performinga first etching process of sequentially etching the first magnetic layerand the first conductive layer by using the first mask patterns as etchmasks. Since the first preliminary magnetic patterns 120P are formedusing the same mask patterns (i.e., the first mask patterns M1) as thefirst conductive lines 110, sidewalls 120PS of the first preliminarymagnetic patterns 120P may be aligned with sidewalls 110S of the firstconductive lines 110.

A first interlayer insulating layer 130 may be formed on the substrate100 to cover the first preliminary magnetic patterns 120P and the firstconductive lines 110. For example, the formation of the first interlayerinsulating layer 130 may include forming a first insulating layercovering the first mask patterns, the first preliminary magneticpatterns 120P and the first conductive lines 110 on the substrate 100,and planarizing the first insulating layer until top surfaces of thefirst preliminary magnetic patterns 120P are exposed. The first maskpatterns may be removed during the planarization of the first insulatinglayer.

A first tunnel barrier layer 140L, a second magnetic layer 150L, aseparation insulating layer 200L, a second conductive layer 210L and athird magnetic layer 220L may be sequentially formed on the firstinterlayer insulating layer 130. The first tunnel barrier layer 140L andthe second magnetic layer 150L may be formed by substantially the samemethod as the tunnel barrier layer 140L and the second magnetic layer150L, described with reference to FIGS. 7 and 8A to 8D. The separationinsulating layer 200L may be formed using, for example, a CVD method andmay be disposed between the second magnetic layer 150L and the secondconductive layer 210L. The second conductive layer 210L and the thirdmagnetic layer 220L may be formed using a CVD method or a PVD method(e.g., a sputtering deposition method).

Second mask patterns M2 may be formed on the third magnetic layer 220L.The second mask patterns M2 may have linear or line shapes extending inthe second direction D2 and may be spaced apart from each other in thefirst direction D1. The second mask patterns M2 may include a materialhaving an etch selectivity with respect to the first tunnel barrierlayer 140L, the second magnetic layer 150L, the separation insulatinglayer 200L, the second conductive layer 210L, and the third magneticlayer 220L. For example, the second mask patterns M2 may include siliconoxide, silicon nitride, and/or silicon oxynitride.

Referring to FIGS. 15 and 16A to 16D, the third magnetic layer 220L, thesecond conductive layer 210L, the separation insulating layer 200L, thesecond magnetic layer 150L and the first tunnel barrier layer 140L maybe etched by a second etching process using the second mask patterns M2as etch masks. The third magnetic layer 220L, the second conductivelayer 210L, the separation insulating layer 200L, the second magneticlayer 150L and the first tunnel barrier layer 140L may be sequentiallyetched by the second etching process, thereby forming second preliminarymagnetic patterns 220P, second conductive lines 210, separationinsulating lines 200, first magnetic lines 150, and first tunnel barrierlines 140.

The first magnetic lines 150 may extend in the second direction D2 tointersect the first preliminary magnetic patterns 120P and may be spacedapart from each other in the first direction D1. The first tunnelbarrier lines 140 may extend in the second direction D2 between thefirst magnetic lines 150 and the first preliminary magnetic patterns120P to intersect the first preliminary magnetic patterns 120P and maybe spaced apart from each other in the first direction D1. Theseparation insulating lines 200 may be formed on the first magneticlines 150, respectively. The separation insulating lines 200 may extendin the second direction D2 and may be spaced apart from each other inthe first direction D1. The second conductive lines 210 may be formed onthe separation insulating lines 200, respectively. The second conductivelines 210 may extend in the second direction D2 and may be spaced apartfrom each other in the first direction D1. The second preliminarymagnetic patterns 220P may be formed on the second conductive lines 210,respectively. The second preliminary magnetic patterns 220P may extendin the second direction D2 and may be spaced apart from each other inthe first direction D1. The second preliminary magnetic patterns 220P,the second conductive lines 210, the separation insulating lines 200,the first magnetic lines 150 and the first tunnel barrier lines 140 maybe formed using the same mask patterns (i.e., the second mask patternsM2), and thus sidewalls 220PS of the second preliminary magneticpatterns 220P, sidewalls 210S of the second conductive lines 210,sidewalls 200S of the separation insulating lines 200, sidewalls 150S ofthe first magnetic lines 150 and sidewalls 140S of the first tunnelbarrier lines 140 may be aligned with each other.

Portions of the first preliminary magnetic patterns 120P, which aredisposed at opposing sides of each of the first magnetic lines 150, maybe etched by the second etching process. The second etching process maybe performed until the top surfaces of the first conductive lines 110 atopposing sides of each of the first magnetic lines 150 are exposed. Thefirst conductive lines 110 may function as an etch stop layer in thesecond etching process. Since the first preliminary magnetic patterns120P are patterned by the second etching process, first magneticpatterns 120 may be formed under each of the first magnetic lines 150.The first magnetic patterns 120 may be spaced apart from each other inthe second direction D2 under each of the first magnetic lines 150. Eachof the first tunnel barrier lines 140 may be disposed between acorresponding one of the first magnetic lines 150 and corresponding onesof the first magnetic patterns 120. The first magnetic patterns 120 maybe locally formed at intersection points or respective intersections ofeach of the first magnetic lines 150 and the first conductive lines 110.

Each of the first magnetic patterns 120 may have first sidewalls 120S1opposite to each other in the first direction D1, and second sidewalls120S2 opposite to each other in the second direction D2. Since the firstpreliminary magnetic patterns 120P are formed using the same maskpatterns (i.e., the first mask patterns M1) as the first conductivelines 110, the second sidewalls 120S2 of each of the first magneticpatterns 120 may be aligned with opposing sidewalls 110S of acorresponding one of the first conductive lines 110, respectively. Inaddition, since the first magnetic patterns 120 are formed using thesame mask patterns (i.e., the second mask patterns M2) as the firstmagnetic lines 150 and the first tunnel barrier lines 140, the firstsidewalls 120S1 of each of the first magnetic patterns 120 may bealigned with opposing sidewalls 140S of a corresponding one of the firsttunnel barrier lines 140, respectively, and may be aligned with opposingsidewalls 150S of a corresponding one of the first magnetic lines 150,respectively.

Portions of the first interlayer insulating layer 130, which aredisposed at opposing sides of each of the first magnetic lines 150, maybe etched by the second etching process. Since the first interlayerinsulating layer 130 is patterned by the second etching process, thefirst interlayer insulating layer 130 may include a first portion 130P1disposed between the first conductive lines 110, and a second portion130P2 disposed between the first magnetic patterns 120. The firstportion 130P1 of the first interlayer insulating layer 130 may cover thesidewalls 110S of the first conductive lines 110 and may expose the topsurfaces of the first conductive lines 110. The second portion 130P2 ofthe first interlayer insulating layer 130 may cover the second sidewalls120S2 of the first magnetic patterns 120 and may expose the firstsidewalls 120S1 of the first magnetic patterns 120.

Referring to FIGS. 17 and 18A to 18D, a second interlayer insulatinglayer 160 may be formed on the first interlayer insulating layer 130 andmay cover the first sidewalls 120S1 of each of the first magneticpatterns 120 and the top surfaces of the first conductive lines 110. Thesecond interlayer insulating layer 160 may cover the sidewalls of thesecond preliminary magnetic patterns 220P, the second conductive lines210, the separation insulating lines 200, the first magnetic lines 150and the first tunnel barrier lines 140. For example, the formation ofthe second interlayer insulating layer 160 may include forming a secondinsulating layer covering the first conductive lines 110, the firstmagnetic patterns 120, the first tunnel barrier lines 140, the firstmagnetic lines 150, the separation insulating lines 200, the secondconductive lines 210, the second preliminary magnetic patterns 220P andthe second mask patterns M2 on the first interlayer insulating layer130, and planarizing the second insulating layer until top surfaces ofthe second preliminary magnetic patterns 220P are exposed. The secondmask patterns M2 may be removed during the planarization of the secondinsulating layer.

A second tunnel barrier layer 240L and a fourth magnetic layer 250L maybe sequentially formed on the second interlayer insulating layer 160.The second tunnel barrier layer 240L may cover the exposed top surfacesof the second preliminary magnetic patterns 220P and a top surface ofthe second interlayer insulating layer 160. The second tunnel barrierlayer 240L may be disposed between the fourth magnetic layer 250L andthe second preliminary magnetic patterns 220P and between the fourthmagnetic layer 250L and the second interlayer insulating layer 160. Thesecond tunnel barrier layer 240L and the fourth magnetic layer 250L maybe formed using a CVD method or a PVD method (e.g., a sputteringdeposition method). The fourth magnetic layer 250L may include aplurality of magnetic domains and a plurality of magnetic domain walls.

Third mask patterns M3 may be formed on the fourth magnetic layer 250L.The third mask patterns M3 may have linear or line shapes extending inthe first direction D1 and may be spaced apart from each other in thesecond direction D2. The third mask patterns M3 may include a materialhaving an etch selectivity with respect to the second tunnel barrierlayer 240L and the fourth magnetic layer 250L. For example, the thirdmask patterns M3 may include silicon oxide, silicon nitride, and/orsilicon oxynitride.

Referring to FIGS. 19 and 20A to 20D, the fourth magnetic layer 250L,the second tunnel barrier layer 240L, the second preliminary magneticpatterns 220P and the second interlayer insulating layer 160 may beetched by a third etching process using the third mask patterns M3 asetch masks. The fourth magnetic layer 250L and the second tunnel barrierlayer 240L may be sequentially etched by the third etching process, andthus second magnetic lines 250 and second tunnel barrier lines 240 maybe formed. The second magnetic lines 250 may extend in the firstdirection D1 to intersect the second preliminary magnetic patterns 220Pand may be spaced apart from each other in the second direction D2. Thesecond tunnel barrier lines 240 may extend in the first direction D1between the second magnetic lines 250 and the second preliminarymagnetic patterns 220P to intersect the second preliminary magneticpatterns 220P and may be spaced apart from each other in the seconddirection D2. Since the second tunnel barrier lines 240 are formed usingthe same mask patterns (i.e., the third mask patterns M3) as the secondmagnetic lines 250, sidewalls 240S of the second tunnel barrier lines240 may be aligned with sidewalls 250S of the second magnetic lines 250.

Portions of the second preliminary magnetic patterns 220P, which aredisposed at opposing sides of each of the second magnetic lines 250, maybe etched by the third etching process. The third etching process may beperformed until top surfaces of the second conductive lines 210 atopposing sides of each of the second magnetic lines 250 are exposed. Thesecond conductive lines 210 may function as an etch stop layer in thethird etching process. Since the second preliminary magnetic patterns220P are patterned by the third etching process, second magneticpatterns 220 may be formed under each of the second magnetic lines 250.The second magnetic patterns 220 may be spaced apart from each other inthe first direction D1 under each of the second magnetic lines 250. Eachof the second tunnel barrier lines 240 may be disposed between acorresponding one of the second magnetic lines 250 and correspondingones of the second magnetic patterns 220. The second magnetic patterns220 may be locally formed at intersection points or respectiveintersections of each of the second magnetic lines 250 and the secondconductive lines 210.

Each of the second magnetic patterns 220 may have third sidewalls 220S3opposite to each other in the first direction D1, and fourth sidewalls220S4 opposite to each other in the second direction D2. Since thesecond preliminary magnetic patterns 220P are formed using the same maskpatterns (i.e., the second mask patterns M2) as the second conductivelines 210, the third sidewalls 220S3 of each of the second magneticpatterns 220 may be aligned with opposing sidewalls 210S of acorresponding one of the second conductive lines 210, respectively. Inaddition, since the second magnetic patterns 220 are formed using thesame mask patterns (i.e., the third mask patterns M3) as the secondmagnetic lines 250 and the second tunnel barrier lines 240, the fourthsidewalls 220S4 of each of the second magnetic patterns 220 may bealigned with opposing sidewalls 240S of a corresponding one of thesecond tunnel barrier lines 240, respectively, and may be aligned withopposing sidewalls 250S of a corresponding one of the second magneticlines 250, respectively.

Portions of the second interlayer insulating layer 160, which aredisposed at opposing sides of each of the second magnetic lines 250, maybe etched by the third etching process. Since the second interlayerinsulating layer 160 is patterned by the third etching process, thesecond interlayer insulating layer 160 may include a third portion 160P3disposed between the second conductive lines 210, and a fourth portion160P4 disposed between the second magnetic patterns 220. The thirdportion 160P3 of the second interlayer insulating layer 160 may coverthe sidewalls 210S of the second conductive lines 210 and may expose thetop surfaces of the second conductive lines 210. The fourth portion160P4 of the second interlayer insulating layer 160 may cover the thirdsidewalls 220S3 of the second magnetic patterns 220 and may expose thefourth sidewalls 220S4 of the second magnetic patterns 220.

Referring again to FIGS. 11 and 12A to 12D, a third interlayerinsulating layer 170 may be formed on the second interlayer insulatinglayer 160 and may cover the fourth sidewalls 220S4 of each of the secondmagnetic patterns 220 and the top surfaces of the second conductivelines 210. The third interlayer insulating layer 170 may be formed tocover the sidewalls 240S of the second tunnel barrier lines 240 and thesidewalls 250S of the second magnetic lines 250. For example, theformation of the third interlayer insulating layer 170 may includeforming a third insulating layer covering the second conductive lines210, the second magnetic patterns 220, the second tunnel barrier lines240, the second magnetic lines 250 and the third mask patterns M3 on thesecond interlayer insulating layer 160, and planarizing the thirdinsulating layer until top surfaces of the second magnetic lines 250 areexposed. The third mask patterns M3 may be removed during theplanarization of the third insulating layer.

According to embodiments of the inventive concepts, the first magneticpatterns 120 may be self-aligned at the intersection points orrespective intersections of the first magnetic lines 150 and the firstconductive lines 110, and the second magnetic patterns 220 may beself-aligned at the intersection points or respective intersections ofthe second magnetic lines 250 and the second conductive lines 210. Inaddition, additional mask patterns for forming the first and secondmagnetic patterns 120 and 220 may not be required. As a result,processes for manufacturing a highly integrated magnetic memory devicemay be simplified, and thus the mass production of the highly integratedmagnetic memory device may be easy.

According to embodiments of the inventive concepts, processes formanufacturing a magnetic memory device may be simplified, and thushigher integration density and mass production of the magnetic memorydevice may be more easily realized.

While the inventive concepts have been described with reference toexample embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirits and scopes of the inventive concepts. Therefore, itshould be understood that the above embodiments are not limiting, butillustrative. Thus, the scope of the inventive concepts are to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing description.

What is claimed is:
 1. A magnetic memory device comprising: a conductiveline extending in a first direction; a magnetic line extending in asecond direction intersecting the first direction on the conductiveline, the magnetic line intersecting the conductive line and extendingbeyond the conductive line in the second direction; and a magneticpattern between the conductive line and the magnetic line, wherein themagnetic pattern comprises first sidewalls opposite to each other in thefirst direction, and second sidewalls opposite to each other in thesecond direction, and wherein the second sidewalls of the magneticpattern are aligned with opposing sidewalls of the conductive line,respectively.
 2. The magnetic memory device of claim 1, wherein themagnetic pattern is at an intersection of the conductive line and themagnetic line.
 3. The magnetic memory device of claim 2, wherein themagnetic line comprises: a plurality of magnetic domains and a pluralityof magnetic domain walls alternately arranged in the second direction,and wherein the magnetic pattern is electrically connected to theconductive line and has a magnetization direction that is fixed in onedirection.
 4. The magnetic memory device of claim 2, further comprising:a tunnel barrier line between the magnetic line and the magnetic patternand extending in the second direction to intersect the conductive line,wherein the first sidewalls of the magnetic pattern are aligned withopposing sidewalls of the tunnel barrier line, respectively.
 5. Themagnetic memory device of claim 4, wherein the opposing sidewalls of thetunnel barrier line are aligned with opposing sidewalls of the magneticline, respectively.
 6. The magnetic memory device of claim 1, whereinthe conductive line is non-magnetic.
 7. The magnetic memory device ofclaim 1, further comprising: a first interlayer insulating layer on theconductive line and the magnetic pattern, wherein the first interlayerinsulating layer comprises: a first portion on the opposing sidewalls ofthe conductive line; and a second portion protruding from the firstportion and extending on the second sidewalls of the magnetic pattern,wherein a top surface of the first portion is substantially coplanarwith a top surface of the conductive line, and wherein the secondportion exposes the first sidewalls of the magnetic pattern.
 8. Themagnetic memory device of claim 7, further comprising: a secondinterlayer insulating layer on the first interlayer insulating layer,wherein the second interlayer insulating layer extends on the topsurface of the conductive line and the first sidewalls of the magneticpattern, and extends on sidewalls of the magnetic line.
 9. The magneticmemory device of claim 7, further comprising: a tunnel barrier linebetween the magnetic line and the magnetic pattern, wherein the tunnelbarrier line extends between the second portion of the first interlayerinsulating layer and the magnetic line.
 10. The magnetic memory deviceof claim 1, wherein the conductive line is a first conductive line, andfurther comprising: a second conductive line extending along the seconddirection, wherein the second conductive line is vertically spaced apartfrom the magnetic line.
 11. A magnetic memory device comprising: a firstconductive line extending in a first direction; a first magnetic lineextending in a second direction intersecting the first direction on thefirst conductive line, the first magnetic line intersecting the firstconductive line; a first magnetic pattern between the first conductiveline and the first magnetic line; a second conductive line extendingalong the second direction on the first magnetic line; a second magneticline extending in the first direction on the second conductive line andintersecting the second conductive line; and a second magnetic patternbetween the second conductive line and the second magnetic line, whereinthe second conductive line is vertically spaced apart from the firstmagnetic line, and wherein the first conductive line and the secondconductive line are non-magnetic.
 12. The magnetic memory device ofclaim 11, wherein the first magnetic pattern is at an intersection ofthe first conductive line and the first magnetic line and iselectrically connected to the first conductive line, and wherein thesecond magnetic pattern is at an intersection of the second conductiveline and the second magnetic line and is electrically connected to thesecond conductive line.
 13. The magnetic memory device of claim 11,further comprising: a first tunnel barrier line between the firstmagnetic line and the first magnetic pattern and extending in the seconddirection to intersect the first conductive line; and a second tunnelbarrier line between the second magnetic line and the second magneticpattern and extending in the first direction to intersect the secondconductive line.
 14. The magnetic memory device of claim 11, wherein thefirst magnetic line comprises a plurality of first magnetic domains anda plurality of first magnetic domain walls alternately arranged in thesecond direction, and wherein the second magnetic line comprises aplurality of second magnetic domains and a plurality of second magneticdomain walls alternately arranged in the first direction.
 15. Themagnetic memory device of claim 14, wherein each of the first and secondmagnetic patterns has a respective magnetization direction that is fixedin a respective direction.
 16. The magnetic memory device of claim 11,further comprising: a separation insulating line extending along thesecond direction between the first magnetic line and the secondconductive line.
 17. A magnetic memory device comprising: conductivelines extending in a first direction and spaced apart from each other ina second direction intersecting the first direction; magnetic linesextending in the second direction on the conductive lines and spacedapart from each other in the first direction, the magnetic linesintersecting the conductive lines and extending beyond the conductivelines in the second direction; magnetic patterns at intersections of theconductive lines and the magnetic lines, respectively; and tunnelbarrier lines between the conductive lines and the magnetic lines,extending in the second direction and spaced apart from each other inthe first direction, wherein each of the tunnel barrier lines is betweena corresponding one of the magnetic lines and corresponding ones of themagnetic patterns, wherein each of the magnetic patterns comprises firstsidewalls opposite to each other in the first direction, and secondsidewalls opposite to each other in the second direction, and whereinthe second sidewalls of each of the magnetic patterns are aligned withsidewalls of a corresponding one of the conductive lines.
 18. Themagnetic memory device of claim 17, wherein each of the magnetic linescomprises a plurality of magnetic domains and a plurality of magneticdomain walls alternately arranged in the second direction.
 19. Themagnetic memory device of claim 18, wherein each of the magneticpatterns has a respective magnetization direction that is fixed in arespective direction, and wherein each of the plurality of magneticdomains has a respective magnetization direction that is changeable tobe parallel or anti-parallel to the respective magnetization directionof a corresponding one of the magnetic patterns.
 20. The magnetic memorydevice of claim 17, wherein the first sidewalls of each of the magneticpatterns are aligned with opposing sidewalls of a corresponding one ofthe tunnel barrier lines.
 21. The magnetic memory device of claim 20,wherein the opposing sidewalls of the corresponding one of the tunnelbarrier lines are aligned with opposing sidewalls of the correspondingone of the magnetic lines, respectively.
 22. The magnetic memory deviceof claim 17, wherein the conductive lines are first conductive lines,and further comprising: second conductive lines extending along thesecond direction, wherein the second conductive lines are verticallyspaced apart from the magnetic lines.